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| A45/SMA45 1000 TO 4000 MHz CASCADABLE AMPLIFIER * HIGH GAIN: 17.5 dB (TYP.) * LOW NOISE: 4.5 dB (TYP.) * HIGH OUTPUT POWER: +19.5 dBm (TYP.) * GaAs FET DESIGN Typical Performance @ 25C Specifications (Rev. Date: 1/01)* Characteristics Frequency Small Signal Gain (min.) Gain Flatness (max.) Reverse Isolation Noise Figure (max.) Power Output @ 1 dB comp. (min.) IP3 IP2 Second Order Harmonic IP VSWR Input / Output (max.) DC Current @ 15 Volts (max.) Typical 0 to 50C Guaranteed -54 to +85C 1.0-4.0 GHz 17.5 dB 0.6 dB 36 dB 4.0 dB 19.5 dBm +29 dBm +39 dBm +44 dBm 1.8:1 / 1.7:1 120 mA 1.0-4.0 GHz 16.5 dB 0.8 dB 5.0 dB 18.0 dBm 1.0-4.0 GHz 15.5 dB 1.0 dB 5.5 dB 17.0 dBm 2.1:1 / 2.1:1 125 mA 2.2:1 / 2.2:1 130 mA * Measured in a 50-ohm system at +15 Vdc Nominal. Subject to change without notice. Absolute Maximum Ratings Storage Temperature Max. Case Temperature Max. DC Voltage Max. Continuous RF Input Power Max. Short Term RF Input Power (1 minute max.) Max. Peak Power (3 sec max.) "S" Series Burn-in Temperature (Case) -65 to +125C 85C +16 Volts +13 dBm 100 mW 0.25 W 85C Thermal Data: Vcc = 15 Vdc Thermal Resistance jc Transistor Power Dissipation Pd Junction Temperature Rise Above Case Tjc 131C/W 0.497 W 65C Outline Drawings Package Figure Model TO-8 BG A45 Surface Mount AA SMA45 SMA Connectorized CE CA45 Specifications subject to change without notice. * North America: 1-800-366-2266 Visit www.macom.com for complete contact and product information. |
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